SCOPUS 정보 검색 플랫폼

Volumn 183, Issue 1-2, 1998, Pages 81-88

Development of finite element computer program for dislocation density analysis of bulk semiconductor single crystals during Czochralski growth

(2) Miyazaki, N a Okuyama, S a

a KYUSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; INTERFACES (MATERIALS); INTERPOLATION; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON;

DISLOCATION KINETIC MODELS; HAASEN SUMINO MODELS; SEMICONDUCTOR SINGLE CRYSTALS;

SINGLE CRYSTALS;

EID: 0031674884 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00388-6 Document Type: Article

Times cited : (46)

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