Finite element analysis of dislocation density during bulk single crystal growth (effect of doping atoms in InP single crystal)

Journal of Crystal Growth

Volumn 196, Issue 1, 1999, Pages 62-66

  Miyazaki, N ^a   Kuroda, Y ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CREEP; DISLOCATIONS (CRYSTALS); ENCAPSULATION; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; STRAIN RATE;

HAASEN-SUMINO MODEL;

CRYSTAL GROWTH FROM MELT;

EID: 0032785163     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00775-1     Document Type: Article

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