Dislocation density analyses of GaAs bulk single crystal during growth process (Effects of crystal anisotropy)

Journal of Crystal Growth

Volumn 218, Issue 2, 2000, Pages 221-231

  Miyazaki, N ^a   Kuroda, Y ^a   Sakaguchi, M ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CREEP; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); ELASTIC MODULI; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; POISSON RATIO; SEMICONDUCTING GALLIUM ARSENIDE; SHEAR STRESS; STRESS ANALYSIS;

CREEP CONSTITUTIVE EQUATIONS; CRYSTAL ANISOTROPY; HAASEN-ALEXANDER-SUMINO MODELS;

SINGLE CRYSTALS;

EID: 0034276153     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00571-6     Document Type: Article

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