Dislocation density analysis of GaAs bulk single crystal during ingot annealing process comparison among several computational methods

Journal of Crystal Growth

Volumn 271, Issue 3-4, 2004, Pages 358-367

  Miyazaki, N ^a   Kumamoto, A ^b   Harada, C ^b  

^a KYOTO UNIVERSITY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

A1. Computer simulation; A1. Crystal anisotropy; A1. Dislocation density; A1. Thermal stress; B1. Gallium arsenide

Indexed keywords

ANNEALING; APPROXIMATION THEORY; CODES (SYMBOLS); COMPUTATIONAL METHODS; COMPUTER SIMULATION; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); ELASTIC MODULI; INGOTS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL STRESS;

CRYSTAL ANISOTROPY; DISLOCATION DENSITY; INGOT ANNEALING;

SINGLE CRYSTALS;

EID: 7544233156     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.076     Document Type: Article

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