Design, fabrication, and characterization of 1.5 mΩcm2, 800 v 4H-SiC n-type Schottky barrier diodes

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 941-944

  Furno, M ^a   Bonani, F ^a   Ghione, G ^a   Ferrero, S ^a   Porro, S ^a   Mandracci, P ^a   Scaltrito, L ^a   Perrone, D ^a   Richieri, G ^b   Merlin, L ^b  

^a POLITECNICO DI TORINO   (Italy)

^b IRCI International Rectifier Corporation Italia   (Italy)

Author keywords

4H SiC power devices; Characterization; Fabrication; Physic based simulation; Schottky diode; Temperature modeling

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL LAYERS; SILICON CARBIDE; TEMPERATURE MEASUREMENT;

4H-SIC POWER DEVICES; PHYSIC BASED SIMULATION; TEMPERATURE MODELING;

SCHOTTKY BARRIER DIODES;

EID: 30344470113     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.941     Document Type: Conference Paper

References (11)

1. E. Bellotti et al.: J. Appl. Phys., Vol. 87, No. 8 (2000), p. 3864.
2. G. L. Harris: Properties of Silicon Carbide (INSPEC, U.K. 1995).
3. M. Bakowski, U. Gustafsson, and U. Lindefelt: Phys. Stat. Sol. (a), Vol. 162 (1997), p. 421.
4. M. Ikeda, H. Matsunami, and T. Tanaka: Phys. Rev. B, Vol. 22 (1980), p. 2842.
5. D. M. Caughey and R. E. Thomas: Proc. IEEE, vol. 55 (1967), p. 2192.
6. H. E. Nilsson, U. Sannemo, and C. S. Petersson: J. Appl. Phys., Vol. 80, No. 6 (1996), p. 3356.
7. I. A. Khan and A. Cooper, Jr.: IEEE Trans. Electron Devices, Vol. 47, No. 2 (2000), p. 269.
8. N. G. Wright et al.: IEE Colloquium on Development in Power Semiconductor Devices (1996), p. 6/1.
9. D. Deflves et al.: IEEE Trans. Electron Devices, Vol. 46, No. 3 (1999), p. 449.
10. J. Crofton and S. Sriram: IEEE Trans. Electron Devices, Vol. 43, No. 12 (1996), p.2305.
11. L. Scaltrito et al.: Mater. Sci. Forum, Vol. 433-436 (2003), p. 455.