Barrier height engineering on GaAs THz Schottky diodes by means of high-low doping, InGaAs- and InGaP-layers

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 24-32

  Sassen, Stefan ^a   Witzigmann, Bernd ^a   Wolk, Claus ^a   Brugger, Hans ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; HETEROJUNCTIONS; MILLIMETER WAVE DEVICES; MOLECULAR BEAM EPITAXY; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TEMPERATURE;

BARRIER HEIGHT ENGINEERING; DC CHARACTERISTIC; SELECTIVE OXYGEN IMPLANTATION; TEMPERATURE DEPENDENT DC MEASUREMENTS;

SCHOTTKY BARRIER DIODES;

EID: 0033888855     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817563     Document Type: Article

References (26)