Aging study on interfacial microstructure and solder-ball shear strength of a wafer-level chip-size package with Au/Ni metallization on a Cu pad

Journal of Electronic Materials

Volumn 33, Issue 11, 2004, Pages 1373-1380

  Chang, Kuo Chin ^a   Chiang, Kuo Ning ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Au layer thickness; Au Ni metallization; Eutectic solder ball; Intermetallic compounds (IMCs); Isothermal aging; Solder ball shear strength

Indexed keywords

AGING OF MATERIALS; COPPER; INTERMETALLICS; ISOTHERMS; METALLIZING; MICROPROCESSOR CHIPS; MICROSTRUCTURE; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SHEAR STRENGTH; SILICON WAFERS;

AU-LAYER THICKNESS; EUTECTIC SOLDER BALLS; INTERFACIAL MICROSTRUCTURE; ISOTHERMAL AGING; MECHANICAL INTERACONNECTIONS; SOLDER-BALL SHEAT STRENGTH;

ELECTRONICS PACKAGING;

EID: 10044219588     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0167-x     Document Type: Conference Paper

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