Large anisotropy of electron mobilities in laterally modulated two-dimensional systems grown on the (775)B-oriented GaAs substrates by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 10 A, 2001, Pages

  Ohno, Y ^a   Kitada, T ^a   Shimomura, S ^a   Hiyamizu, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

(775)B; Corrugation; Electron concentration; GaAs; Mobility; Molecular beam epitaxy

Indexed keywords

ANISOTROPY; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL ORIENTATION; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

THICKNESS MODULATION;

ELECTRON GAS;

EID: 0035483282     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1058     Document Type: Article

References (17)