Electron transport and optical properties of InGaAs quantum wells with quasi-periodic (L0 ∼ 30 nm) interface corrugation grown on vicinal (1 1 1)B GaAs

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 333-336

  Noda, T ^a   Nagamune, Y ^a   Nakamura, Y ^a   Sakaki, H ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Anisotropy; Interface corrugation; Transport properties; Vicinal (1 1 1)B GaAs

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS); OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

INTERFACE CORRUGATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036492979     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00551-3     Document Type: Conference Paper

References (7)