Anisotropic mobilities of low-dimensional electrons at stepped n-AlGaAs/GaAs interfaces with 15 nm periodicity on vicinal (111)B substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 8, Issue 3, 2000, Pages 219-222

  Nakamura, Y ^a,b   Noda, T ^b   Motohisa, J ^b   Sakaki, H ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARRIER CONCENTRATION; CARRIER MOBILITY; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

EPILAYERS; LOW-DIMENSIONAL ELECTRONS;

HETEROJUNCTIONS;

EID: 0034273034     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00159-4     Document Type: Article

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