STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (7 5 7)B substrates

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 569-574

  Noda, T ^a   Sumida, N ^b   Koshiba, S ^b   Nishioka, S ^b   Negi, Y ^b   Okunishi, E ^c   Akiyama, Y ^a   Sakaki, H ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b KAGAWA UNIVERSITY   (Japan)

^c JEOL LTD   (Japan)

Author keywords

A1. Diffusion; A1. Growth; A1. Step bunching; A3. MBE; B1. Nanomaterials

Indexed keywords

ARSENIC; CORRUGATED MATERIALS; DIFFUSION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PARTICLE BEAM BUNCHING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CORRUGATED STRUCTURES; LATERAL SUPERLATTICES (LSL); SMOOTHING PROCESS; STEP-BUNCHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 18444401450     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.103     Document Type: Conference Paper

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