Molecular beam epitaxial growth of AlGaAs/InGaAs/GaAs planar superlattice structures on vicinal (111)B GaAs and their transport properties

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1162-1165

  Akiyama, Y ^a   Kawazu, T ^a   Noda, T ^b   Koshiba, S ^c   Torii, K ^a   Sakaki, H ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c KAGAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUPERLATTICES;

ATOMIC STEPS; INGAAS LAYERS; PHOTOLUMINESCENCE (PL) SPECTRA;

HETEROJUNCTIONS;

EID: 31144443727     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1924470     Document Type: Conference Paper

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