Control of microscratches in chemical-mechanical polishing process for shallow trench isolation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 5849-5853

  Park, Heungsoo ^a   Kim, Kwang Bok ^a   Hong, Chang Ki ^a   Chung, U In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Chemical mechanical polishing; Consumables; Microscratches; pH controlled slurry; Planarization; Potassium hydroxide; Shallow trench isolation

Indexed keywords

CHEMICAL POLISHING; PH EFFECTS; POTASSIUM COMPOUNDS; SLURRIES;

CHEMICAL MECHANICAL POLISHING; MICROSCRATCHES; PLANARIZATION; POTASSIUM HYDROXIDE; SHALLOW TRENCH ISOLATION; SILICON OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032206556     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5849     Document Type: Article

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