Dependence of pH, molecular weight, and concentration of surfactant in ceria slurry on saturated nitride removal rate in shallow trench Isolation chemical mechanical polishing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 A, 2005, Pages 4752-4758

  Kang, Hyun Goo ^a   Lee, Myung Yoon ^a   Park, Hyung Soon ^b   Pair, Ungyu ^a   Park, Jea Gun ^a  

^a Hanyang University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Cerla; CMP; Molecular weight; Nitride film; Oxide film; Shallow trench Isolation; Surfactant concentration

Indexed keywords

CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; CONCENTRATION (PROCESS); MOLECULAR WEIGHT; NITRIDES; PH EFFECTS; SLURRIES; THIN FILMS;

CERLA; NITRIDE FILM; OXIDE FILM; SURFACTANT CONCETRATION;

SURFACE ACTIVE AGENTS;

EID: 31544476268     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.4752     Document Type: Article

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