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Volumn 43, Issue 1 A/B, 2004, Pages

Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing

Author keywords

Abrasive; CMP; Concentration; Nanotopography; Oxide film; Shallow trench isolation; Size; Surfactant

Indexed keywords

ABRASIVES; ADDITION REACTIONS; CERIUM COMPOUNDS; NANOTECHNOLOGY; OXIDATION; PASSIVATION; SLURRIES; SURFACE ACTIVE AGENTS; VISCOMETERS; VISCOSITY;

EID: 1842659067     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1     Document Type: Article
Times cited : (13)

References (17)
  • 1
    • 0003699181 scopus 로고
    • Silicon Processing for the VLSI Era
    • Lattice Press, Sunset Beach, Chap. 13
    • S. Wolf: Silicon Processing for the VLSI Era (Lattice Press, Sunset Beach, 1990) Vol. 2-Process Integration, Chap. 13, p. 24.
    • (1990) Vol. 2-Process Integration , pp. 24
    • Wolf, S.1
  • 11
    • 1842827898 scopus 로고    scopus 로고
    • Guide for Reporting Wafer Nanotopography
    • SEMI Document M31, Guide for Reporting Wafer Nanotopography.
    • SEMI Document , vol.M31


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.