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Volumn 43, Issue 3 A, 2004, Pages

Effects of grain size and abrasive size of polycrystalline nano-particle ceria slurry on shallow trench isolation chemical mechanical polishing

Author keywords

Ceria; CMP; Grain size; Nanotopography; Oxide film; Secondary particle size; Shallow trench isolation; Surfactant

Indexed keywords

ABRASION; CALCINATION; CHEMICAL MECHANICAL POLISHING; COLLOIDS; GRAIN SIZE AND SHAPE; NANOSTRUCTURED MATERIALS; ORGANIC ACIDS; PARTICLE SIZE ANALYSIS; POLYCRYSTALLINE MATERIALS; SURFACE ACTIVE AGENTS; THERMAL EFFECTS;

EID: 2442560543     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l365     Document Type: Article
Times cited : (19)

References (22)
  • 8
    • 0001466853 scopus 로고    scopus 로고
    • Wafer Flatness Requirements for Future Technology
    • Intel Corp.
    • K. K. V. Ravi: Intel Corp., "Wafer Flatness Requirements for Future Technology", Future Fab. International 7 (1999) 207.
    • (1999) Future Fab. International , vol.7 , pp. 207
    • Ravi, K.K.V.1
  • 20
    • 2442575448 scopus 로고
    • Wiley Interscience, New York, 2nd ed., Chap. 17
    • J. S. Reed: Principles of Ceramics Processing (Wiley Interscience, New York, 1995) 2nd ed., Chap. 17, p. 323.
    • (1995) Principles of Ceramics Processing , pp. 323
    • Reed, J.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.