Plasma-induced damage in high-formula formula-κ/metal gate stack dry etch

IEEE Electron Device Letters

Volumn 27, Issue 12, 2006, Pages 972-974

  Hussain, Muhammad Mustafa ^a   Song, Seung Chul ^a   Barnett, Joel ^a   Kang, Chang Yong ^a   Gebara, Gabe ^b   Sassman, Barry ^a   Moumen, Naim ^c  

^a SEMATECH   (United States)

^b Advanced Technology Development Facility   (United States)

^c IBM   (United States)

Author keywords

Gate induced drain leakage (GIDL); High metal gate; Plasma dry etch; Threshold voltage; Wet etch

Indexed keywords

DRY ETCHING; LEAKAGE CURRENTS; PLASMA ETCHING; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE; WET ETCHING;

GATE STACK; GATE-INDUCED DRAIN LEAKAGE (GIDL); METAL GATE; PLASMA-BASED DRY ETCH;

CMOS INTEGRATED CIRCUITS;

EID: 33947231540     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.886327     Document Type: Article

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