Gate-induced drain leakage current enhanced by plasma charging damage

IEEE Transactions on Electron Devices

Volumn 48, Issue 5, 2001, Pages 1006-1008

  Ma, Siguang ^a   Zhang, Yaohui ^c   Li, M F ^a   Li, Weidan ^b   Xie, Joseph ^c   Sheng, George T T ^c   Yen, Andrew C ^c   Wang, John L F ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b AGERE SYSTEMS   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

CMOSFET; Leakage current; Plasma charging damage

Indexed keywords

ANTENNA AREA RATIO; GATE-INDUCED DRAIN LEAKAGE CURRENT; INTERFACE TRAPS; PLASMA CHARGING DAMAGE;

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE STRUCTURES;

MOSFET DEVICES;

EID: 0035340604     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.918252     Document Type: Article

References (15)