Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure

IEEE Electron Device Letters

Volumn 17, Issue 8, 1996, Pages 388-394

  Okandan, Murat ^a,b   Fonash, Stephen J ^a,b   Awadelkarim, Osama O ^b   Chan, Y David ^c   Preuninger, Fred ^c,d  

^a IEEE

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c SEMATECH   (United States)

^d NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; LIGHT EMISSION; MOS DEVICES; MOSFET DEVICES; OXIDES; PERFORMANCE; PLASMA ETCHING; SEMICONDUCTING SILICON;

GATE OXIDE CURRENT; GATE VOLTAGE; HIGH DENSITY PLASMA ETCHING; SOFT BREAKDOWN; THRESHOLD SWING; THRESHOLD VOLTAGE;

ELECTRIC BREAKDOWN;

EID: 0030213083     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.511584     Document Type: Article

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