Deposition and characteristics of tantalum nitride films by plasma assisted atomic layer deposition as Cu diffusion barrier

Materials Research Society Symposium - Proceedings

Volumn 766, Issue , 2003, Pages 491-496

  Na, Kyoung Il ^a   Park, Se Jong ^a   Jeong, Woo Cheol ^b   Kim, Se Hoon ^b   Boo, Sung Eun ^b   Bae, Nam Jin ^b   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

^b Comtesc Incorporated ^*  (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CARBON; COMPOSITION; COPPER; DENSITY (SPECIFIC GRAVITY); DIFFUSION; METALLIC FILMS; NITRIDES; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STABILITY; TEMPERATURE;

COPPER DIFFUSION BARRIER; PENTAKISETHYLMETHYLAMINO TANTALUM; PLASMA ASSISTED ATOMIC LAYER DEPOSITION; TANTALUM NITRIDE; TANTALUM NITRIDE FILMS; THERMAL ATOMIC LAYER DEPOSITION;

TANTALUM COMPOUNDS;

EID: 0346938311     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-766-e3.22     Document Type: Conference Paper

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