Effect of annealing on physical and electrical properties of ultrathin crystalline γ-Al2O3 high-k dielectric deposited on Si substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 8 A, 2004, Pages 5404-5408

  Shahjahan, Mohammad ^a   Okada, Takayuki ^a   Sawada, Kazuaki ^a   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

High k gate dielectrics; MBE; Oxide fixed charges; Post deposition annealing; Ultrathin crystalline al2o3

Indexed keywords

ANNEALING; COMPOSITION; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; FABRICATION; MOLECULAR BEAM EPITAXY; NITROGEN COMPOUNDS; PERMITTIVITY; PHYSICAL PROPERTIES; SILICON; SUBSTRATES; SURFACES; TEMPERATURE DISTRIBUTION;

HIGH-Κ GATE DIELECTRICS; OXIDE-FIXED CHARGES; POST DEPOSITION ANNEALING (PDA); ULTRATHIN CRYSTALLINE Γ-AL2O3;

ULTRATHIN FILMS;

EID: 6344254839     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5404     Document Type: Article

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