Low-temperature formation of silicon nitride film by direct nitridation employing high-density and low-energy ion bombardment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2329-2332

  Saito, Yuji ^a   Sekine, Katsuyuki ^a   Hirayama, Masaki ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Direct nitridation; High density plasma; Ion bombardment; Low temperature; Silicon nitride

Indexed keywords

EID: 0001669282     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2329     Document Type: Article

References (9)

1. Y. Kawai, N. Konishi, J. Watanabe and T. Ohmi: Appl. Phys. Lett. 64 (1994) 2223.
2. M. Hirayama and T. Ohmi: Ext. Abstr. 1996 Int. Conf. American Vacuum Symp. 1996, p. 199.
3. R. Kaihara, M. Hirayama and T. Ohmi: to be published in J. Electrochem. Soc.
4. N. Goto and M. Yamamoto: IEICE Jpn. Tech. Rep. AP80-57 (1980) 43.
5. M. Ando, K. Sakurai, N. Goto, K. Arimura and Y. Ito: IEEE Trans. Antennas & Propag. 33 (1985) 1347.
6. J. Hirokawa, M. Ando and N. Goto: IEEE Proc. 137 (1990) 249.
7. T. Ohmi, M. Miyasita, M. Itano, T. Imaoka and I. Kawanabe: IEEE Trans. Electron Device 39 (1992) 537.
8. M. M. Moslehi and K. C. Sarawat: IEEE Trans. Electron Device ED-32 (1985) 106.
9. T. Ito, J. Kato, T. Nozaki, T. Nakamura and H. Ishikawa: Appl. Phys. Lett. 38 (1981) 370.