Atomic-scale characterization of nitridation processes on Si(100)-2 × 1 surfaces by radical nitrogen

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2827-2829

  Matsushita, Daisuke ^a   Ikeda, Hiroya ^a   Sakai, Akira ^a   Zaima, Shigeaki ^a   Yasuda, Yukio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Nitridation of Si(100); Radical nitrogen; STM STS

Indexed keywords

DEFECTS; DIMERS; ENERGY GAP; HIGH TEMPERATURE EFFECTS; NITRIDING; NITROGEN; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPIC ANALYSIS; SURFACE PHENOMENA;

ATOMIC-SCALE CHARACTERIZATION;

SEMICONDUCTING SILICON;

EID: 0035300703     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2827     Document Type: Article

References (11)