Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics

Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

  Cubaynes, F N ^a   Venezia, V C ^a   Van Der Marel, C ^a   Snijders, J H M ^a   Everaert, J L ^b   Shi, X ^b   Rothschild, A ^b   Schaekers, M ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL BONDS; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS DEVICES; PLASMA DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE CAPACITANCE; GATE DIELECTRICS; GATE LEAKAGE CURRENT; PLASMA NITRIDATION;

SILICA;

EID: 20844454507     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1915523     Document Type: Article

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