Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 449-453

  Enta, Y ^a   Takegawa, Y ^a   Suemitsu, M ^a   Miyamoto, N ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DECOMPOSITION; ELECTRON ENERGY LEVELS; HIGH TEMPERATURE EFFECTS; OXIDATION; REACTION KINETICS; REAL TIME SYSTEMS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; ULTRAVIOLET SPECTROSCOPY;

LANGMUIR TYPE ADSORPTION; REAL TIME ULTRAVIOLET PHOTOELECTRON; THERMAL OXIDATION; TWO DIMENSIONAL ISLAND GROWTH;

SURFACE PHENOMENA;

EID: 0030564421     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00318-2     Document Type: Article

References (6)

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