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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 1, 1998, Pages 261-265

Growth mode and characteristics of the O2-oxidized Si(100) surface oxide layer observed by real time photoemission measurement

(5) Takegawa, Youichi a,d Enta, Yoshiharu a Suemitsu, Maki a Miyamoto, Nobuo b Kato, Hiroo c

a TOHOKU UNIVERSITY (Japan)

b TOHOKU GAKUIN UNIVERSITY (Japan)

c HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK (Japan)

d TOSHIBA CORPORATION (Japan)

Author keywords

Dry O2; In situ observation; Oxidation; Oxide; Photoelectron spectroscopy; Photoemission; Real time measurement; Si(100)

Indexed keywords

GAS ADSORPTION; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; PYROLYSIS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; SYNCHROTRON RADIATION; THERMODYNAMIC STABILITY; THERMOOXIDATION; ULTRAVIOLET SPECTROSCOPY;

LANGMUIR ADSORPTION;

SEMICONDUCTING SILICON;

EID: 0031673768 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.37.261 Document Type: Article

Times cited : (8)

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