RF performance of strained Si MODFETs and MOSFETs on "virtual" SiGe substrates: A Monte Carlo study

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 192-195

  Roy, S ^a   Asenov, A ^a   Babiker, S ^a   Barker, J R ^a   Beaumont, S P ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MODFETS; MOSFET DEVICES; SILICON;

ANALYSIS TECHNIQUES; DEVICE PERFORMANCE; EFFECTIVE CHANNEL LENGTH; ENSEMBLE MONTE CARLO; FREQUENCY POTENTIAL; MAXIMUM FREQUENCY OF OSCILLATIONS; REALISTIC DEVICES; STRAINED SI CHANNEL;

MONTE CARLO METHODS;

EID: 33847689185     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194398     Document Type: Conference Paper

References (9)

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