Optimizations of sub-100nm Si/SiGe MODFETs for high linearity RF applications

2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Volumn , Issue , 2003, Pages 331-334

  Yang, L ^a   Asenov, A ^a   Borici M ^a   Watling, J R ^a   Barker, J R ^a   Roy, S ^a   Elgaid, K ^b   Thayne, I ^b   Hackbarth, T ^c  

^a Device Modelling Group   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ECONOMIC AND SOCIAL EFFECTS; ELECTRON DEVICES; HIGH ELECTRON MOBILITY TRANSISTORS; MODFETS; SILICON;

DAIMLER-CHRYSLER; DEVICE GEOMETRIES; DEVICE PERFORMANCE; DOPING STRATEGIES; GATE LENGTH SCALING; RF APPLICATIONS; STRAINED SI CHANNEL; TRADE-OFF DESIGN;

SOLID STATE DEVICES;

EID: 33847688248     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2003.1283543     Document Type: Conference Paper

References (11)

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