Monte Carlo simulations of SiGe n-MODFETs with high tensile strained Si channels

Semiconductor Science and Technology

Volumn 15, Issue 7, 2000, Pages 770-775

  Crow, G C ^a   Abram, R A ^a   Yangthaisong, A ^a  

^a DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET); SILICON GERMANIDE;

GATES (TRANSISTOR);

EID: 0034225996     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/7/319     Document Type: Article

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