Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition

Applied Physics Letters

Volumn 83, Issue 26, 2003, Pages 5464-5466

  Hackbarth, T ^a   Herzog, H J ^a   Hieber, K H ^a   Konig U ^a   Bollani, M ^b   Chrastina, D ^c   Von Kanel H ^c  

^a DAIMLER AG   (Germany)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); FILM GROWTH; LATTICE CONSTANTS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PLASMA DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS; THERMAL CONDUCTIVITY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

HIGH-DENSITY PLASMAS; VIRTUAL SUBSTRATES (VS);

FIELD EFFECT TRANSISTORS;

EID: 0942288635     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1636820     Document Type: Article

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