Effects of plasma treatment on the high frequency characteristics of Cu/Ta/hydrogen silsesquioxane (HSQ) system and electrical behaviors of Cu/Ta/HSQ/Pt MIM capacitors

Microelectronic Engineering

Volumn 84, Issue 4, 2007, Pages 646-652

  Ho, Chia Cheng ^a   Chiou, Bi Shiou ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Hydrogen silsesquioxane; Insertion loss; Interconnect; Plasma treatment

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; INSERTION LOSSES; MIM DEVICES; NATURAL FREQUENCIES; OPTICAL INTERCONNECTS; PERMITTIVITY;

COPPER ATOMS; HYDROGEN SILSESQUIOXANE; PLASMA BOMBARDMENTS; PLASMA TREATMENT;

CAPACITORS;

EID: 33847627504     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.12.010     Document Type: Article

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