Electromigration and integration aspects for the copper-SiLK system

Journal of Electronic Materials

Volumn 33, Issue 7, 2004, Pages 796-801

  Tseng, H S ^a   Chiou, Bi Shiou ^a   Wu, W F ^a,b   Ho, C C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Cu; Electromigration; Si; SiLK; SiO2

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; COPPER COMPOUNDS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTANCE; ELECTROLESS PLATING; HEAT TRANSFER; PASSIVATION; PERMITTIVITY; REACTIVE ION ETCHING;

CURRENT SPUTTERING; DIELECTRIC APPLICATIONS; THERMAL IMPEDANCE;

ELECTROMIGRATION;

EID: 3242741093     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0244-1     Document Type: Article

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