Highly porous interlayer dielectric for interconnect capacitance reduction

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1995, Pages 61-62

  Jeng, Shin Puu ^a   Taylor, Kelly ^a   Seha, Tom ^a   Chang, Mi Chang, ^a   Fattaruso, John ^a   Havemann, Robert H ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CROSSLINKING; DENSIFICATION; DIELECTRIC MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR STRUCTURE; PERMITTIVITY; POROSITY; POROUS MATERIALS; SILICON WAFERS; X RAY DIFFRACTION;

CHEMICAL MECHANICAL POLISHING; COMB STRUCTURE; CURE TEMPERATURE; GLASS TRANSITION TEMPERATURE; HYDROGEN SILSEQUIOXANE; POLYHEDRAL SILSEQUIOXANE; STANDARD SEMICONDUCTOR SPIN-ON PRODUCTION TECHNIQUES;

ULSI CIRCUITS;

EID: 0029531049     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)