-
1
-
-
0141886205
-
Mechanism of reliability failure in Cu interconnects with ultra-low-k materials
-
Sep.
-
N. L. Michael, C. U. Kim, P. Gillespie, and R. Augur, "Mechanism of reliability failure in Cu interconnects with ultra-low-k materials," Appl. Phys. Lett., vol. 83, pp. 1959-1961, Sep. 2003.
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 1959-1961
-
-
Michael, N.L.1
Kim, C.U.2
Gillespie, P.3
Augur, R.4
-
2
-
-
2142650898
-
Barrier deposition on porous low-k films
-
D. Shamiryan, Z. S. Yanovitskaya, F. Iacopi, and K. Maex, "Barrier deposition on porous low-k films," in Proc. Advanced Metallization Conf. (AMC), 2002, pp. 829-833.
-
(2002)
Proc. Advanced Metallization Conf. (AMC)
, pp. 829-833
-
-
Shamiryan, D.1
Yanovitskaya, Z.S.2
Iacopi, F.3
Maex, K.4
-
3
-
-
0037600582
-
Diffusion barrier integrity and electrical performance of Cu/porous dielectric damascene line
-
Mar.
-
F. Iacopi, Z. Tokei, M. Stucchi, F. Lanckmans, and K. Maex, "Diffusion barrier integrity and electrical performance of Cu/porous dielectric damascene line," IEEE Electron Device Lett., vol. 24, no. 3, pp. 147-149, Mar. 2003.
-
(2003)
IEEE Electron Device Lett.
, vol.24
, Issue.3
, pp. 147-149
-
-
Iacopi, F.1
Tokei, Z.2
Stucchi, M.3
Lanckmans, F.4
Maex, K.5
-
4
-
-
11144356214
-
Dielectric/metal sidewall diffusion barrier for Cu/porous ultra-low-k interconnect technology
-
Mar.
-
Z. Chen, K. Prasad, C. Y. Li, P. W. Lu, S. S. Su, L. J. Tang, D. Gui, S. Balakumar, R. Shu, and R. Kumar, "Dielectric/metal sidewall diffusion barrier for Cu/porous ultra-low-k interconnect technology," Appl. Phys. Lett., vol. 84, pp. 2442-2444, Mar. 2004.
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 2442-2444
-
-
Chen, Z.1
Prasad, K.2
Li, C.Y.3
Lu, P.W.4
Su, S.S.5
Tang, L.J.6
Gui, D.7
Balakumar, S.8
Shu, R.9
Kumar, R.10
-
5
-
-
20444476549
-
-
Sunset Beach, CA: Lattice Press
-
S. Wolf, Silicon Processing for the VLSI Era. Sunset Beach, CA: Lattice Press, 2002, vol. 4, pp. 738-739.
-
(2002)
Silicon Processing for the VLSI Era
, vol.4
, pp. 738-739
-
-
Wolf, S.1
-
6
-
-
0037939731
-
A new method for deposition of cubic Ta diffusion barrier for Cu metallization
-
Jun.
-
Z. L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, C. M. Tan, and L. J. Tang, "A new method for deposition of cubic Ta diffusion barrier for Cu metallization," Thin Solid Films, vol. 434, pp. 126-129, Jun. 2003.
-
(2003)
Thin Solid Films
, vol.434
, pp. 126-129
-
-
Yuan, Z.L.1
Zhang, D.H.2
Li, C.Y.3
Prasad, K.4
Tan, C.M.5
Tang, L.J.6
-
7
-
-
4344609728
-
2/Si structures
-
Sep.
-
2/Si structures," Thin Solid Films, vol. 462-463, pp. 284-287, Sep. 2004.
-
(2004)
Thin Solid Films
, vol.462-463
, pp. 284-287
-
-
Yuan, Z.L.1
Zhang, D.H.2
Li, C.Y.3
Prasad, K.4
Tan, C.M.5
-
8
-
-
0142106896
-
Simulations of diffusion barrier deposition on porous low-k films
-
Nov.
-
Z. S. Yanovitskaya, A. V. Zverev, D. Shamiryan, and K. Maex, "Simulations of diffusion barrier deposition on porous low-k films," Microelectron. Eng., vol. 70, pp. 363-367, Nov. 2003.
-
(2003)
Microelectron. Eng.
, vol.70
, pp. 363-367
-
-
Yanovitskaya, Z.S.1
Zverev, A.V.2
Shamiryan, D.3
Maex, K.4
-
9
-
-
0842285060
-
Preparation of damascene trench sidewall in CVD nano-porous ultra-low k (k = 2.2) films for compatibility with MOCVD diffusion barriers
-
H. Donohue, J.-C. Yeoh, S. Burgess, and K. Buchanan, "Preparation of damascene trench sidewall in CVD nano-porous ultra-low k (k = 2.2) films for compatibility with MOCVD diffusion barriers," in Proc. Advanced Metallization Conf. (AMC), 2002, pp. 575-581.
-
(2002)
Proc. Advanced Metallization Conf. (AMC)
, pp. 575-581
-
-
Donohue, H.1
Yeoh, J.-C.2
Burgess, S.3
Buchanan, K.4
-
10
-
-
0036118847
-
Properties of porous HSQ-based films capped by plasma enhanced chemical vapor deposition dielectric layers
-
Jan./Feb.
-
F. Iacopi, M. R. Baklanov, E. Sleeckx, T. Conard, H. Bender, H. Meynen, and K. Maex, "Properties of porous HSQ-based films capped by plasma enhanced chemical vapor deposition dielectric layers," J. Vac. Sci. Technol. B, vol. 20, pp. 109-115, Jan./Feb. 2002.
-
(2002)
J. Vac. Sci. Technol. B
, vol.20
, pp. 109-115
-
-
Iacopi, F.1
Baklanov, M.R.2
Sleeckx, E.3
Conard, T.4
Bender, H.5
Meynen, H.6
Maex, K.7
-
11
-
-
0036677392
-
Factor affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin film
-
Aug.
-
F. Iacopi, Z. Tokei, Q. T. Le, D. Shamiryan, T. Conard, B. Brijs, U. Kressig, M. Van Hove, and K. Maex, "Factor affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin film," J. Appl. Phys., vol. 92, pp. 1548-1554, Aug. 2002.
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 1548-1554
-
-
Iacopi, F.1
Tokei, Z.2
Le, Q.T.3
Shamiryan, D.4
Conard, T.5
Brijs, B.6
Kressig, U.7
Van Hove, M.8
Maex, K.9
-
12
-
-
0035741366
-
Comparative study of ionized metal plasma Ta, TaN and multistacked Ta/TaN structure as diffusion barriers for Cu metallizaiton
-
Oct.
-
C. Y. Li, D. H. Zhang, L. He, J. J. Wu, Y. Qian, L. T. Koh, B. Yu, P. D. Foo, and J. Xie, "Comparative study of ionized metal plasma Ta, TaN and multistacked Ta/TaN structure as diffusion barriers for Cu metallizaiton," Surf. Rev. Lett., vol. 8, pp. 459-464, Oct. 2001.
-
(2001)
Surf. Rev. Lett.
, vol.8
, pp. 459-464
-
-
Li, C.Y.1
Zhang, D.H.2
He, L.3
Wu, J.J.4
Qian, Y.5
Koh, L.T.6
Yu, B.7
Foo, P.D.8
Xie, J.9
-
13
-
-
0034818469
-
Acomparative study of copper drift diffusion in plasma deposited a-SiC:H and silicon nitride
-
Mar.
-
F. Lanckmans, W. D. Gray, B. Brijs, and K. Maex, "Acomparative study of copper drift diffusion in plasma deposited a-SiC:H and silicon nitride," Microelectron. Eng., vol. 55, pp. 329-335, Mar. 2001.
-
(2001)
Microelectron. Eng.
, vol.55
, pp. 329-335
-
-
Lanckmans, F.1
Gray, W.D.2
Brijs, B.3
Maex, K.4
-
14
-
-
0033699193
-
2N as barriers for the integration of low-k dielectric hydrogen silsesquioxane
-
Jan.
-
2N as barriers for the integration of low-k dielectric hydrogen silsesquioxane," J. Vac. Sci. Technol. B, vol. 18, pp. 221-230, Jan. 2000.
-
(2000)
J. Vac. Sci. Technol. B
, vol.18
, pp. 221-230
-
-
Zeng, Y.1
Russell, S.W.2
Mckerrow, A.J.3
Chen, L.4
Alford, T.L.5
-
15
-
-
3042651003
-
Highly reliable dielectric/metal bilayer sidewall diffusion barrier in Cu/porous organic ultra-low-k interconnects
-
Z. Chen, K. Prasad, C. Y. Li, P. W. Lu, S. S. Su, and L. J. Tang, "Highly reliable dielectric/metal bilayer sidewall diffusion barrier in Cu/porous organic ultra-low-k interconnects," in Proc. 42nd Annu. Int. Reliability and Physics Symp. (IRPS), 2004, pp. 320-325.
-
(2004)
Proc. 42nd Annu. Int. Reliability and Physics Symp. (IRPS)
, pp. 320-325
-
-
Chen, Z.1
Prasad, K.2
Li, C.Y.3
Lu, P.W.4
Su, S.S.5
Tang, L.J.6
-
16
-
-
84949235812
-
Pseudobreakdown events induced by biased-thermal-stress of intra-level Cu interconnects - Reliability and performance impact
-
W. S. Song, T. J. Kim, D. H. Lee, T. K. Kim, C. S. Lee, J. W. Kim, S. Y. Kim, D. K. Jeong, K. C. Park, Y. J. Wee, B. S. Suh, S. M. Choi, H. K. Kang, K. P. Suh, and S. U. Kim, "Pseudobreakdown events induced by biased-thermal-stress of intra-level Cu interconnects - Reliability and performance impact," in Proc. 40th Int. Reliability and Physics Symp. (IRPS), 2002, pp. 305-311.
-
(2002)
Proc. 40th Int. Reliability and Physics Symp. (IRPS)
, pp. 305-311
-
-
Song, W.S.1
Kim, T.J.2
Lee, D.H.3
Kim, T.K.4
Lee, C.S.5
Kim, J.W.6
Kim, S.Y.7
Jeong, D.K.8
Park, K.C.9
Wee, Y.J.10
Suh, B.S.11
Choi, S.M.12
Kang, H.K.13
Suh, K.P.14
Kim, S.U.15
-
17
-
-
0029325536
-
Diffusion of copper through dielectric films under bias temperature stress
-
Jun.
-
G. Raghavan, C. Chiang, P. B. Anders, S. M. Tzeng, R. Villasol, G. Bai, M. Bohr, and D. B. Fraser, "Diffusion of copper through dielectric films under bias temperature stress," Thin Solid Films, vol. 262, pp. 168-176, Jun. 1995.
-
(1995)
Thin Solid Films
, vol.262
, pp. 168-176
-
-
Raghavan, G.1
Chiang, C.2
Anders, P.B.3
Tzeng, S.M.4
Villasol, R.5
Bai, G.6
Bohr, M.7
Fraser, D.B.8
-
18
-
-
0031680437
-
Enhanced dielectric breakdown lifetime of the copper/silicon nitride/silicon dioxide structure
-
K. Takeda, K. Hinode, I. Oodake, N. Oohashi, and H. Yamaguchi, "Enhanced dielectric breakdown lifetime of the copper/silicon nitride/silicon dioxide structure," in Proc. 36th Annu. Int. Reliability and Physics Symp. (IRPS), 1998, pp. 36-40.
-
(1998)
Proc. 36th Annu. Int. Reliability and Physics Symp. (IRPS)
, pp. 36-40
-
-
Takeda, K.1
Hinode, K.2
Oodake, I.3
Oohashi, N.4
Yamaguchi, H.5
-
19
-
-
0038310145
-
Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics
-
E. T. Ogawa, J. Kim, G. S. Haase, H. C. Mogul, and J. W. McPherson, "Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics," in Proc. 41st Annu. Int. Reliability and Physics Symp. (IRPS), 2003, pp. 166-172.
-
(2003)
Proc. 41st Annu. Int. Reliability and Physics Symp. (IRPS)
, pp. 166-172
-
-
Ogawa, E.T.1
Kim, J.2
Haase, G.S.3
Mogul, H.C.4
McPherson, J.W.5
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