S-parameters-based high speed signal characterization of Al interconnect on low-k hydrogen silsesquioxane-Si substrate

Microelectronic Engineering

Volumn 83, Issue 3, 2006, Pages 528-535

  Ho, Chia Cheng ^a   Chiou, Bi Shiou ^a,b  

^a Institute of Electronics   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Attenuation noise; Coupling effect; Crosstalk; High speed interconnect; Hydrogen silsesquioxane; Insertion loss; Low k dielectric; S parameters

Indexed keywords

ALUMINUM; COUPLED CIRCUITS; ELECTRIC POWER SYSTEM INTERCONNECTION; HYDROGEN; SEMICONDUCTOR MATERIALS; SUBSTRATES;

ATTENUATION NOISE; COUPLING EFFECT; HIGH SPEED INTERCONNECT; HYDROGEN SILSESQUIOXANE; INSERTION LOSS; LOW-K DIELECTRIC;

SCATTERING PARAMETERS;

EID: 33244478100     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.12.006     Document Type: Article

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