Temperature-oriented experiment and simulation as corroborating evidence of MOSFET backscattering theory

IEEE Electron Device Letters

Volumn 28, Issue 2, 2007, Pages 177-179

  Chen, Ming Jer ^a   Yan, Shih Guei ^a   Chen, Rong Ting ^a   Hsieh, Chen Yu ^a   Huang, Pin Wei ^a   Chen, Han Ping ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Backscattering; MOSFET; Nanoscale; Scattering

Indexed keywords

COMPUTER SIMULATION; MONTE CARLO METHODS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

BACKSCATTERING THEORY;

MOSFET DEVICES;

EID: 33847372859     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.889504     Document Type: Article

References (15)

1. M. S. Lundstrom, "Elementary scattering theory of the Si MOSFET," IEEE Electron Device Lett., vol. 18, no. 7, pp. 361-363, Jul. 1997.
2. S. Datta, Electronic Transport in Mesoscopic Systems. Cambridge, U.K.: Cambridge Univ. Press, 1995.
3. M. S. Lundstrom, Fundamentals of Carrier Transport, 2nd ed. Cambridge, U.K.: Cambridge Univ. Press, 2000.
4. M.-J. Chen, H.-T. Huang, K.-C. Huang, P.-N. Chen, C.-S. Chang, and C. H. Diaz, "Temperature dependent channel backscattering coefficients in nanoscale MOSFETs," in IEDM Tech. Dig., Dec. 2002, pp. 39-42.
5. F. Assad, Z. Ren, S. Datta, and M. S. Lundstrom, "Performance limits of silicon MOSFET's," in IEDM Tech. Dig., Dec. 1999, pp. 547-550.
6. G. Timp, J. Bude, K. K. Bourdelle, J. Garno, A. Ghetti, H. Gossmann, M. Green, G. Forsyth, Y. Kim, R. Kleiman, F. Klemens, A. Kornblit, C. Lochstampfor, W. Mansfield, S. Moccio, T. Sorsch, D. M. Tennant, W. Timp, and R. Tung, "The ballistic nano-transistor," in IEDM Tech. Dig., Dec. 1999, pp. 55-58.
7. A. Lochtefeld and D. A. Antoniadis, "On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit?," IEEE Electron Device Lett., vol. 22, no. 2, pp. 95-97, Feb. 2001.
8. H.-L. Lin, H.-W. Chen, C.-H. Ko, C.-H. Ge, H.-C. Lin, T.-Y. Huang, W.-C. Lee, and D. D. Tang, "The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs," in VLSI Symp. Tech. Dig., Jun. 2005, pp. 174-175.
9. E. Pop, C.-O. Chui, S. Sinha, R. Dutton, and K. Goodson, "Electrothermal comparison and performance optimization of thin-body SOI and GOI MOSFETs," in IEDM Tech. Dig., Dec. 2004, pp. 411-414.
10. [Online] Available: http://www.nanohub.purdue.edu
11. M.-J. Chen, H.-T. Huang, Y.-C. Chou, R.-T. Chen, Y.-T. Tseng, P.-N. Chen, and C. H. Diaz, "Separation of channel backscattering coefficients in nanoscale MOSFETs," IEEE Trans. Electron Devices, vol. 51, no. 9, pp. 1409-1415, Sep. 2004.
12. A. Rahman and M. S. Lundstrom, "A compact scattering model for the nanoscale double-gate MOSFET," IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 481-489, Mar. 2002.
13. C. Jacoboni, C. Canali, G. Ottaviani, and A. A. Quaranta, "A review of some charge transport properties of silicon," Solid State Electron., vol. 20, no. 2, pp. 77-89, Feb. 1977.
14. K. Natori, "Ballistic MOSFET reproduces current-voltage characteristics of an experimental device," IEEE Electron Device Lett., vol. 23, no. 11, pp. 655-657, Nov. 2002.
15. G. A. Sai-Halasz, M. R. Wordeman, D. P. Kern, E. Ganin, S. Rishton, Z. S. Zicherman, H. Schmod, M. R. Polcari, H. Y. Ng, P. J. Restle, T. H. P. Chang, and R. H. Dennard, "Design and experimental technology for 0.1 μm gate length low-temperature operation FETs," IEEE Electron Device Lett., vol. 8, no. 10, pp. 463-466, Oct. 1998.