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Journal of Crystal Growth

Volumn 276, Issue 3-4, 2005, Pages 381-388

Design of the low-temperature AlN interlayer for GaN grown on Si (1 1 1) substrate

(6) Cong, Guangwei a Lu, Yuan a Peng, Wenqin a Liu, Xianglin a Wang, Xiaohui a Wang, Zhanguo a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

A1. Substrates; A3. Metalorganic chemical vapor deposition; B1. AlN interlayer; B1. GaN

Indexed keywords

ALUMINUM NITRIDE; COALESCENCE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; STRESS RELAXATION; X RAY DIFFRACTION ANALYSIS;

BACKSCATTERING GEOMETRY; CRYSTAL QUALITY; EPILAYERS; X RAY GENERATORS;

SEMICONDUCTOR GROWTH;

EID: 15344344224 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.419 Document Type: Article

Times cited : (46)

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