Stress and microstructure evolution in compositionally graded Al 1-xGaxN buffer layers for GaN growth on Si

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 27-32

  Weng, Xiaojun ^a   Raghavan, Srinivasan ^a   Dickey, Elizabeth C ^a   Redwing, Joan M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; MICROSTRUCTURE; SILICON; TENSILE STRENGTH; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; STRESS TRANSITION; THREADING DISLOCATION (TD) DENSITY; X-RAY ENERGY DISPERSIVE SPECTROMETRY (XEDS);

GALLIUM NITRIDE;

EID: 33646401386     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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