Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition

Journal of Electronic Materials

Volumn 32, Issue 5, 2003, Pages 371-374

  Venugopal, R ^a   Wan, J ^a   Melloch, M ^a   Kim, G ^b   Zank, G ^b   Tsoi, S ^c   Ramdas, A ^c  

^a PURDUE UNIVERSITY   (United States)

^b DOW CORNING CORPORATION   (United States)

^c NONE

Author keywords

Aluminum nitride; Buffer schemes; Si(111) substrates

Indexed keywords

COMPRESSIVE STRENGTH; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON;

BUFFER SCHEMES;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0038325588     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0160-9     Document Type: Conference Paper

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