An electron injection model for time-dependent simulators of nanoscale devices with electron confinement: Application to the comparison of the intrinsic noise of 3D-, 2D- and 1D-ballistic transistors

Solid-State Electronics

Volumn 51, Issue 2, 2007, Pages 306-319

  Oriols, X ^a   Fernandez Diaz E ^a   Alvarez, A ^a   Alarcon A ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; BOUNDARY CONDITIONS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; SPURIOUS SIGNAL NOISE; TRANSISTORS;

BALLISTIC TRANSISTORS; INJECTION MODEL; INTRINSIC NOISE; LANDAUER APPROACH;

NANOTECHNOLOGY;

EID: 33847260243     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.01.011     Document Type: Article

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