Bardeen's approach for tunneling evaluation in MOS structures

Solid-State Electronics

Volumn 46, Issue 7, 2002, Pages 1039-1044

  Clerc, R ^a   Ghibaudo, G ^a   Pananakakis, G ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TUNNELING; LEAKAGE CURRENTS; NUMERICAL ANALYSIS; QUANTUM THEORY; ULTRATHIN FILMS;

GATE OXIDES;

MOS DEVICES;

EID: 0036642867     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00039-4     Document Type: Conference Paper

References (21)

1. Wave mechanics applied to semiconductor heterostructures
2. Quantum effects in MOS devices