Injection statistics simulator for dynamic analysis of noise in mesoscopic devices

Semiconductor Science and Technology

Volumn 14, Issue 11, 1999, Pages

  Gonzalez T ^a   Mateos, J ^a   Pardo, D ^a   Varani, L ^b   Reggiani, L ^c  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b UNIVERSITÉ MONTPELLIER II   (France)

^c UNIVERSITY OF SALENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTORS; MATHEMATICAL MODELS; MONTE CARLO METHODS; ONE DIMENSIONAL; SPURIOUS SIGNAL NOISE; THERMAL CONDUCTIVITY;

MESOSCOPIC DEVICES; THERMAL RESERVOIRS;

PARTICLE BEAM INJECTION;

EID: 0039138180     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/11/103     Document Type: Article

References (24)

1. Kogan Sh 1996 Electronic Noise and Fluctuations in Solids (Cambridge: Cambridge University Press)
2. de Jong M J M and Beenakker C W J 1997 Mesoscopic Electron Transport (NATO ASI Series E: Applied Sciences 345) ed L L Sohn, L P Kouwenhoven and G Schön (Dordrecht: Kluwer) p 225
3. Landauer R 1957 IBM J. Res. Dev. 1 223
4. Büttiker M 1990 Phys. Rev. Lett. 65 2901
5. Martin Th and Landauer R 1992 Phvs. Rev. B 45 1742
6. Büttiker M 1992 Phys. Rev. B 46 12485
7. Kuhn T, Reggiani L and Varani L 1992 Superlatt. Microstruct. 11 205
8. Kuhn T and Reggiani L 1992 Nuovo Cimento D 14 509
9. Reggiani L, Varani L, González T, Pardo D and Kuhn T 1995 Proc. 22nd Int. Conf. on the Physics of Semiconductors ed D J Lockwood (Singapore: World Scientific) p 1963
10. Greiner A, Reggiani L, Kuhn T and Varani L 1997 Phys. Rev. Lett. 78 1114
11. Nagaev K E 1992 Phys. Lett. A 169 103
12. Naveh Y, Averin D V and Likharev K K 1997 Phys. Rev. Lett. 79 3482
13. Sukhorukov E V and Loss D 1998 Phys. Rev. Lett. 80 4959
14. Liu R C, Eastman P and Yamamoto Y 1997 Solid State Commun. 102 785
15. González T, Bulashenko O M, Mateos J, Pardo D and Reggiani L 1997 Phys. Rev. B 56 6424
16. Bulashenko O M, Mateos J, Pardo D, González T, Reggiani L and Rubí J M 1998 Phys. Rev. B 57 1366
17. González T, González C, Mateos J, Pardo D, Reggiani L, Bulashenko O M and Rubí J M 1998 Phys. Rev. Lett. 80 2901
18. González T, Mateos J, Pardo D, Bulashenko O M and Reggiani L 1998 Semicond. Sci. Technol. 13 714
19. Jacoboni C and Lugli P 1989 The Monte Carlo Method for Semiconductor Device Simulation (Berlin: Springer)
20. Varani L, Reggiani L, Kuhn T, González T and Pardo D 1994 IEEE Trans. Electron Devices 41 1916
21. Woolard D L, Tian H, Littlejohn M A and Kim K W 1994 IEEE Trans. Electron Devices 41 601
22. González T and Pardo D 1996 Solid-State Electron. 39 555
23. Levitov L S and Lesovik G B 1993 JETP Lett. 58 230
24. Levitov L S, Lee H and Lesovik G B 1996 J. Math. Phys. 37 4845