Dopant profiling in vertical ultrathin channels of double-gate metal-oxide-semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Applied Physics Letters

Volumn 85, Issue 18, 2004, Pages 4139-4141

  Masahara, Meishoku ^a   Hosokawa, Shinichi ^a   Matsukawa, Takashi ^a   Endo, Kazuhiko ^a   Naitou, Yuuichi ^a   Tanoue, Hisao ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRONS; ION IMPLANTATION; MICROSCOPIC EXAMINATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PROFILOMETRY; SEMICONDUCTOR DOPING;

DOPANT PROFILING; SCANNING NONLINEAR DIELECTRIC MICROSCOPY (SNDM); ULTRAGENTLE ANGLE; ULTRATHIN CHANNELS (UTC);

MOSFET DEVICES;

EID: 10044280629     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1812571     Document Type: Article

References (12)

1. T. Sekigawa and Y. Hayashi, Solid-State Electron. 27, 827 (1984).
2. H.-S. P. Wong, K. K. Chan, and Y. Taur, Tech. Dig. - Int. Electron Devices Meet. 1997, 427.
3. Y.-X. Liu, M. Masahara, K. Ishii, T. Tsutsumi, T. Sekigawa, H. Takashima, H. Yamauchi, and E. Suzuki, Tech. Dig. - Int. Electron Devices Meet. 2003, 986.
4. M. Masahara, T. Matsukawa, K. Ishii, Y.-X. Liu, H. Tanoue, K. Sakamoto, T. Sekigawa, H. Yamauchi, S. Kanemaru, and E. Suzuki, Tech. Dig. - Int. Electron Devices Meet. 2002, 949.
5. S. W. Crowder, P. M. Rousseau, J. P. Snyder, J. A. Scott, P. B. Griffin, and J. D. Plummer, Tech. Dig. - Int. Electron Devices Meet. 1995, 427.
6. H. Park, E. C. Jones, P. Ronsheim, C. Cabrai, Jr., C. D'Emic, G. M. Cohen, R. Young, and W. Rausch, Tech. Dig. - Int. Electron Devices Meet. 1999, 337.
7. V. V. Zavyalov, J. S. McMurray, and C. C. Williams, Rev. Sci. Instrum. 70, 158 (1999).
8. T. Matsukawa, C. Yasumuro, M. Masahara, H. Tanou, and S. Kanemaru, Appl. Phys. Lett. 84, 3169 (2004).
9. J. J. Kopanski, J. F. Marchiando, D. W. Berning, R. Alvis, and H. E. Smith, J. Vac. Sci. Technol. B 16, 339 (1998).
10. G. A. Sai-Halasz, K. T. Short, and J. S. Williams, IEEE Electron Device Lett. 6, 285 (1985).
11. P. Normand, D. Tsoukalas, N. Guillemot, and P. Chenevier, J. Appl. Phys. 66, 3585 (1989).
12. M. Koh-Masahara, K. Egusa, H. Furumoto, T. Shirakata, E. Seo, K. Shibahara, S. Yokoyama, and M. Hirose, Jpn. J. Appl. Phys., Part 1 38, 2324 (1999).