Two-dimensional ultrashallow junction characterization of metal-oxide-semiconductor field effect transistors with strained silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 373-376

  Wang, Xiang Dong ^a   Liu, Chun Li ^a   Thean, Aaron ^a   Duda, Erika ^a   Liu, Ran ^a   Xie, Qianghua ^a   Lu, Shifeng ^a   Barr, Alex ^a   White, Ted ^a   Nguyen, Bich Yen ^a   Orlowski, Marius ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIFFUSION; ELECTRONS; ETCHING; FIELD EFFECT TRANSISTORS; ION IMPLANTATION; LATTICE CONSTANTS; POLISHING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICA; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ULTRASHALLOW JUNCTIONS; UNSTRAINED DEVICES;

SEMICONDUCTOR JUNCTIONS;

EID: 12144286592     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1627793     Document Type: Conference Paper

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