A GaAsSb/InP HBT circuit technology

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Volumn 2005, Issue , 2005, Pages 133-136

  Godin, J ^a   Riet, M ^a   Konczykowska, A ^a   Berdaguer, P ^a   Kahn, M ^a   Bove, P ^b   Lahreche, H ^b   Langer, R ^b   Lijadi, M ^c   Pardo, F ^c   Bardou, N ^c   Pelouard, J L ^c   Maneux, C ^d   Belhaj, M ^d   Grandchamp, B ^d   Labat, N ^d   Touboul, A ^d   Bru Chevallier, C ^e   Chouaib, H ^e   Benyattou, T ^e  

^a ALCATEL THALES III V LAB   (France)

^b Picogiga International SAS   (France)

^c CNRS   (France)

^d UNIVERSITÉ BORDEAUX 1   (France)

^e INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; NETWORKS (CIRCUITS); OPTIMIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

CIRCUIT ORIENTED TECHNOLOGY; DOUBLE-HETEROJUNCTION BIPOLAR TRANSISTOR (DHBT) STRUCTURE; PHYSICAL CHARACTERIZATIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33847143013     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

1. R. Bhat, W. P. Hong, C. Caneau, M. A. Koza, C. K. Nguyen, and S. Goswami, "InP/GaAsSb and InP/GaAsSb/InGaAsP Double Heterojunction Bipolar Transistors With A Carbon-Doped Base Grown By Organometallic Chemical Vapor Deposition", Applied Physics Letters, Vol 68 (7), pp. 985-987, 1996
2. M. W. Dvorak, C. R. Bolognesi, O. J. Pitts, and S. P. Watkins, "300 GHz InP/GaAsSb/InP Double HBTs with High Current Capability and BVCEO >6 V", IEEE Electron Device Lett, Vof 22, No 8, Aug. 2001, pp. 361-363
3. P. Bove, H. Lahrèche, R. Langer, "InP/GaAsSb and (Al,Ga)InAs/GaAsSb DHBT material grown in a 4 inches multiwafer MBE machine", Indium Phosphide and Related Materials Conf., 14th IPRM, pp. 607-610, May 2002
4. H. G. Liu, N. Tao, S. P. Watkins, C. R. Bolognesi, "Extraction of the average collector velocity in high-speed 'type IF InP-GaAsSb-InP DHBTs", IEEE Electron Device Letters, Volume 25, Issue 12, Dec 2004, pp. 769-771.
5. C. Bru-Chevallier, H. Chouaib, J. Arcamone, T. Benyattou, H. Lahreche, P. Bove, "Photoreflectance spectroscopy for the study of GaAssb/InP heterojunction bipolar transistors", Thin Solid Films, Volume 450, pp. 151-154 (2004)
6. H. Chouaib, C. Bru-Chevallier, T. Benyattou, H. Lahreche, P. Bove, "Evidence for localization effets in GaAsSb/InP heterostructures from optical spectroscopy", Material Research Society Symposium Proceedings, Vol. 799, pp. 93-198 (2004)
7. M. Belhaj, C. Maneux, N. Labat, A. Touboul and P. Bove, "Two dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor", Solid State Electronic, Vol. 49, No 6, June 2005, pp. 956-964
8. C. R. Bolognesi and S. P. Watkins, "InP-based double heterojunction bipolar transistors: It may not have to be GaInAs", Compound Semiconductors, 6 (2000) 94.
9. M. Belhaj, C. Maneux, N. Labat, A. Touboul and P. Bove, "High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects", Microelectronics Reliability, 43, (2003) 1731-1736.
10. th IPRM, pp. 51-54, May '02
11. th IPRM, April 2005.
12. C. Bru-Chevallier, H. Chouaib, A. Bakouboula and T. Benyattou, "Photoreflectance study at the micrometer scale", E-MRS invited paper (June 2005). To appear in Applied Surface Science.
13. M.Lijadi, F. Pardo, and JL.Pelouard, "Floating Contacts Trans-mission Line Modeling", Solid State Electronic, to be published
14. J. Godin, M. Riet, S. Blayac, P. Berdaguer, V. Dhalluin, F. Alexandre, M. Kahn, A. Pinquier, A. Kasbari, J. Moulu, A. Konczykowska, "InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits", Gallium Arsenide Integrated Circuit, 24th GaAs IC Symposium, pp. 215-218, 2002
15. A. Konczykowska, M. Riet, P. Berdaguer, P. Bove, M. Kahn, and J. Godin, "40 Gbit/s digital IC fabricated using an InP/GaAsSb/InP DHBT technology", accepted for publication in IEE Electronics Letters