InP/GaAsSb and (Al,Ga) InAs/GaAsSb DHBT material grown in a 4 inches multiwafer MBE machine

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 607-610

  Bove, Philippe ^a   Lahrèche, Hacène ^a   Langer, Robert ^a  

^a Picogiga International   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CURRENT GAIN; DOPING CONCENTRATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036049552     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)