Evidence for localization effects in GaAsSb/InP heterostructures from optical spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 799, Issue , 2003, Pages 193-198

  Chouaib, Houssam ^a   Bru Chevallier, Catherine ^a   Benyattou, Taha ^a   Lahreche, Hacene ^b   Bove, Philippe ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b PICOGIGA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL CIRCUITS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; PHOTODIODES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY DIFFRACTION ANALYSIS;

LOCALIZATION EFFECTS; OPTICAL SPECTROSCOPY; POTENTIAL FLUCTUATIONS;

HETEROJUNCTIONS;

EID: 3042594895     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-799-z4.4     Document Type: Conference Paper

References (9)

1. th International conference on Vapor Phase Epitaxy, Sapporo Japan, (2000)
2. M.W. Dvorak, C.R. Bolognesi, O.J. Pitts, S.P. Watkins, IEEE EDL ,22, pp361-363 (2001).
3. M.Peter, N.Herres, F.Fuchs, K. Winkler, K.H. Bachem, J. Wagner, Appl.Phys.Lett. 74, p410 (1999).
4. . Hu, X. G. Xu, J. A. H. Stotz, S. P. Watkins, A. E. Curzon, and M. L. W. Thewalt., Appl.Phys.Lett. 73, N° 19, P 2799 (1998)
5. th International conference on Amorphous and Liquid Semiconductors, 1974, II, pp.953-962.
6. F.A.J.M Driessen, G.J. Bauhuis, S.M. Olsthoorn, Giling, L.J Phys. Rev.B, Vol.48 pp.7889-7896.(1993).
7. L. Grenouillet, C. Bru-Chevallier, G. Guillot, P. Gilet, P. Duvaut, A. Vannuffel, A. Million, A. Chenevas-Paule, Appl. Phys. Lett., 76, pp2241-2243 (2000)
8. R. Kudrawiec, G. Sek, J. Misiewicz, L.H.Li, J.C. Harmand, Appl. Phys. Lett. 83 pp1379-1381 (2003)
9. Y. Baltagi, E. Béarzi, C. Bru-Chevallier, T. Benyattou, G. Guillot, J.C. Harmand, Mat. Res. Soc. Symp.Proc. 406, pp333-338 (1996).