Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors

Thin Solid Films

Volumn 450, Issue 1, 2004, Pages 151-154

  Bru Chevallier, C ^a,c   Chouaib, H ^a   Arcamone, J ^a   Benyattou, T ^a   Lahreche, H ^b   Bove, P ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b ULIS   (France)

^c UNIVERSITÉ DE LYON   (France)

Author keywords

GaAsSb; Heterojunction bipolar transistors; Photoreflectance

Indexed keywords

ELECTRIC FIELDS; ENERGY GAP; INTERFACES (MATERIALS); LIGHT AMPLIFIERS; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; PHOTODIODES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; X RAY DIFFRACTION;

GAASSB; PHOTOREFLECTANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1142303863     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.061     Document Type: Conference Paper

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