Extraction of the average collector velocity in high-speed " Type-II" InP-GaAsSb-InP DHBTs

IEEE Electron Device Letters

Volumn 25, Issue 12, 2004, Pages 769-771

  Liu, H G ^a,b   Tao, N ^a,b   Watkins, S P ^a,b   Bolognesi, C R ^a,b  

^a School of Engineering Science   (Canada)

^b SIMON FRASER UNIVERSITY   (Canada)

Author keywords

GaAsSb; Heterojunction bipolar transistors (HBTs); Indium phosphide

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

AVERAGE COLLECTOR ELECTRON VELOCITY; BIAS DEPENDENCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 10644289529     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.838553     Document Type: Article

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