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Volumn 14, Issue 1, 1999, Pages 24-28

Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors

(11) Lee, B T a Kim, D K a Moon, C K a Kim, J K a Seo, Y H b Nahm, K S b Lee, H J b Lee, K W c Yu, K S c Kim, Y c Jang, S J d

a Chonnam National University (South Korea)

b Chonbuk National University (South Korea)

c Korea Research Institute of Chemical Technology (South Korea)

d Dongshin University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBONIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; FILM GROWTH; PYROLYSIS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

HETEROEPITAXY;

SEMICONDUCTING FILMS;

EID: 0032647665 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.1999.0006 Document Type: Article

Times cited : (23)

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